FDN357N

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Overview of FDN357N

Part NumberFDN357N
ManufacturerFairchild Semiconductor
DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
DatasheetsDownload FDN357N Datasheet PDFPDF Icon
Price for FDN357N

Specification of FDN357N

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.9 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3

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