FDP16N50

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Overview of FDP16N50

Part NumberFDP16N50
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 500V 16A TO220-3
DatasheetsDownload FDP16N50 Datasheet PDFPDF Icon
Price for FDP16N50

Specification of FDP16N50

Status
Obsolete
Series
UniFET™
Package
Tube
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1945 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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