FDP4D5N10C

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Overview of FDP4D5N10C

Part NumberFDP4D5N10C
Manufactureronsemi
DescriptionMOSFET N-CH 100V 128A TO220-3
DatasheetsDownload FDP4D5N10C Datasheet PDFPDF Icon
Price for FDP4D5N10C

Specification of FDP4D5N10C

Status
Active
Series
PowerTrench®
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 310A
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5065 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 150W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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