FDS6675

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Overview of FDS6675

Part NumberFDS6675
Manufactureronsemi
DescriptionMOSFET P-CH 30V 11A 8SOIC
DatasheetsDownload FDS6675 Datasheet PDFPDF Icon
Price for FDS6675

Specification of FDS6675

Status
Obsolete
Series
PowerTrench®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
onsemi,Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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