FDY1002PZ-G

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Overview of FDY1002PZ-G

Part NumberFDY1002PZ-G
Manufactureronsemi
DescriptionIC
Price for FDY1002PZ-G

Specification of FDY1002PZ-G

Status
Last Time Buy
Series
PowerTrench®
Package
Bulk
Supplier
onsemi
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
-
Rds On (Max) @ Id, Vgs
500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
135pF @ 10V
Power - Max
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563

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