FF4MR20KM1HHPSA1

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Overview of FF4MR20KM1HHPSA1

Part NumberFF4MR20KM1HHPSA1
ManufacturerInfineon Technologies
DescriptionMEDIUM POWER 62MM
Price for FF4MR20KM1HHPSA1

Specification of FF4MR20KM1HHPSA1

Status
Active
Series
C
Package
Tray
Supplier
Infineon Technologies
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
2000V (2kV)
Current - Continuous Drain (Id) @ 25C
280A (Tc)
Rds On (Max) @ Id, Vgs
5.3mOhm @ 300A, 18V
Vgs(th) (Max) @ Id
5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs
1170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
36100pF @ 1.2kV
Power - Max
-
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-62MMHB

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