FF8MR12W1M1HS4PB11BPSA1

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Overview of FF8MR12W1M1HS4PB11BPSA1

Part NumberFF8MR12W1M1HS4PB11BPSA1
ManufacturerInfineon Technologies
DescriptionLOW POWER EASY
Price for FF8MR12W1M1HS4PB11BPSA1

Specification of FF8MR12W1M1HS4PB11BPSA1

Status
Active
Series
CoolSiC™
Package
Tray
Supplier
Infineon Technologies
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25C
100A (Tj)
Rds On (Max) @ Id, Vgs
8.1mOhm @ 100A, 18V
Vgs(th) (Max) @ Id
5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
8800pF @ 800V
Power - Max
20mW
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1B

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