FGB5N60UNDF

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Overview of FGB5N60UNDF

Part NumberFGB5N60UNDF
ManufacturerFairchild Semiconductor
DescriptionINSULATED GATE BIPOLAR TRANSISTO
DatasheetsDownload FGB5N60UNDF Datasheet PDFPDF Icon
Price for FGB5N60UNDF

Specification of FGB5N60UNDF

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
10 A
Current - Collector Pulsed (Icm)
15 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 5A
Power - Max
73.5 W
Switching Energy
80J (on), 70J (off)
Input Type
Standard
Gate Charge
12.1 nC
Td (on/off) @ 25C
5.4ns/25.4ns
Test Condition
400V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr)
35 ns
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB (DPAK)

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