FGD3N60LSDTM-T

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Overview of FGD3N60LSDTM-T

Part NumberFGD3N60LSDTM-T
Manufactureronsemi
DescriptionINTEGRATED CIRCUIT
DatasheetsDownload FGD3N60LSDTM-T Datasheet PDFPDF Icon
Price for FGD3N60LSDTM-T

Specification of FGD3N60LSDTM-T

Status
Obsolete
Package
Bulk,Bulk
Supplier
Rochester Electronics, LLC,onsemi
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
6 A
Current - Collector Pulsed (Icm)
25 A
Vce(on) (Max) @ Vge, Ic
1.5V @ 10V, 3A
Power - Max
40 W
Switching Energy
250J (on), 1mJ (off)
Input Type
Standard
Gate Charge
12.5 nC
Td (on/off) @ 25C
40ns/600ns
Test Condition
480V, 3A, 470Ohm, 10V
Reverse Recovery Time (trr)
234 ns
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA

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