FQA10N80C

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Overview of FQA10N80C

Part NumberFQA10N80C
Manufactureronsemi
DescriptionMOSFET N-CH 800V 10A TO3P
DatasheetsDownload FQA10N80C Datasheet PDFPDF Icon
Price for FQA10N80C

Specification of FQA10N80C

Status
Obsolete
Series
QFET®
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3

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