FQAF17P10

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Overview of FQAF17P10

Part NumberFQAF17P10
Manufactureronsemi
DescriptionMOSFET P-CH 100V 12.4A TO3PF
DatasheetsDownload FQAF17P10 Datasheet PDFPDF Icon
Price for FQAF17P10

Specification of FQAF17P10

Status
Obsolete
Series
QFET®
Package
Tube
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack

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