FQB34N20LTM

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Overview of FQB34N20LTM

Part NumberFQB34N20LTM
Manufactureronsemi
DescriptionMOSFET N-CH 200V 31A D2PAK
DatasheetsDownload FQB34N20LTM Datasheet PDFPDF Icon
Price for FQB34N20LTM

Specification of FQB34N20LTM

Status
Obsolete
Series
QFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 180W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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