FQB6N60CTM

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Overview of FQB6N60CTM

Part NumberFQB6N60CTM
Manufactureronsemi
DescriptionMOSFET N-CH 600V 5.5A D2PAK
DatasheetsDownload FQB6N60CTM Datasheet PDFPDF Icon
Price for FQB6N60CTM

Specification of FQB6N60CTM

Status
Obsolete
Series
QFET®
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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