FQB9N50TM

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Overview of FQB9N50TM

Part NumberFQB9N50TM
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 500V 9A D2PAK
DatasheetsDownload FQB9N50TM Datasheet PDFPDF Icon
Price for FQB9N50TM

Specification of FQB9N50TM

Status
Obsolete
Series
QFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
730mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 147W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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