FQD12N20LTM-F085

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Overview of FQD12N20LTM-F085

Part NumberFQD12N20LTM-F085
Manufactureronsemi
DescriptionMOSFET N-CH 200V 9A DPAK
DatasheetsDownload FQD12N20LTM-F085 Datasheet PDFPDF Icon
Price for FQD12N20LTM-F085

Specification of FQD12N20LTM-F085

Status
Not For New Designs
Series
Automotive, AEC-Q101, QFET®
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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