FQD3P50TF

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Overview of FQD3P50TF

Part NumberFQD3P50TF
Manufactureronsemi
DescriptionMOSFET P-CH 500V 2.1A DPAK
DatasheetsDownload FQD3P50TF Datasheet PDFPDF Icon
Price for FQD3P50TF

Specification of FQD3P50TF

Status
Obsolete
Series
QFET®
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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