FQI4N20TU

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Overview of FQI4N20TU

Part NumberFQI4N20TU
Manufactureronsemi
DescriptionMOSFET N-CH 200V 3.6A I2PAK
DatasheetsDownload FQI4N20TU Datasheet PDFPDF Icon
Price for FQI4N20TU

Specification of FQI4N20TU

Status
Obsolete
Series
QFET®
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 45W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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