FQNL2N50BBU

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Overview of FQNL2N50BBU

Part NumberFQNL2N50BBU
Manufactureronsemi
DescriptionMOSFET N-CH 500V 350MA TO92-3
Price for FQNL2N50BBU

Specification of FQNL2N50BBU

Status
Obsolete
Series
QFET®
Package
Bulk
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)

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