FQP10N60C

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Overview of FQP10N60C

Part NumberFQP10N60C
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 600V 9.5A TO220-3
DatasheetsDownload FQP10N60C Datasheet PDFPDF Icon
Price for FQP10N60C

Specification of FQP10N60C

Status
Obsolete
Series
QFET®
Package
Tube
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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