FQP2N80

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Overview of FQP2N80

Part NumberFQP2N80
Manufactureronsemi
DescriptionMOSFET N-CH 800V 2.4A TO220-3
DatasheetsDownload FQP2N80 Datasheet PDFPDF Icon
Price for FQP2N80

Specification of FQP2N80

Status
Obsolete
Series
QFET®
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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