FQPF2N80YDTU

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Overview of FQPF2N80YDTU

Part NumberFQPF2N80YDTU
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 800V 1.5A TO220F-3
DatasheetsDownload FQPF2N80YDTU Datasheet PDFPDF Icon
Price for FQPF2N80YDTU

Specification of FQPF2N80YDTU

Status
Active
Series
QFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.3Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3 (Y-Forming)
Package / Case
TO-220-3 Full Pack, Formed Leads

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