FQPF9N25CT

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Overview of FQPF9N25CT

Part NumberFQPF9N25CT
Manufactureronsemi
DescriptionMOSFET N-CH 250V 8.8A TO220F
DatasheetsDownload FQPF9N25CT Datasheet PDFPDF Icon
Price for FQPF9N25CT

Specification of FQPF9N25CT

Status
Obsolete
Series
QFET®
Package
Tube,Tube
Supplier
Flip Electronics,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
710 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack

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