FQT4N20LTF

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Overview of FQT4N20LTF

Part NumberFQT4N20LTF
Manufactureronsemi
DescriptionMOSFET N-CH 200V 850MA SOT223-4
DatasheetsDownload FQT4N20LTF Datasheet PDFPDF Icon
Price for FQT4N20LTF

Specification of FQT4N20LTF

Status
Active
Series
QFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
onsemi,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.2W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA

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