FQU10N20TU_AM002

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Overview of FQU10N20TU_AM002

Part NumberFQU10N20TU_AM002
Manufactureronsemi
DescriptionMOSFET N-CH 200V 7.6A IPAK
DatasheetsDownload FQU10N20TU_AM002 Datasheet PDFPDF Icon
Price for FQU10N20TU_AM002

Specification of FQU10N20TU_AM002

Status
Obsolete
Series
QFET®
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 51W (Tc)
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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