FQU5N60CTU

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Overview of FQU5N60CTU

Part NumberFQU5N60CTU
Manufactureronsemi
DescriptionMOSFET N-CH 600V 2.8A IPAK
DatasheetsDownload FQU5N60CTU Datasheet PDFPDF Icon
Price for FQU5N60CTU

Specification of FQU5N60CTU

Status
Obsolete
Series
QFET®
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 49W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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