G050P03T

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Overview of G050P03T

Part NumberG050P03T
ManufacturerGoford Semiconductor
DescriptionP-30V,-85A,RD(MAX)<5M@-10V,VTH-1
DatasheetsDownload G050P03T Datasheet PDFPDF Icon
Price for G050P03T

Specification of G050P03T

Status
Active
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6922 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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