G08N03D2

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Overview of G08N03D2

Part NumberG08N03D2
ManufacturerGoford Semiconductor
DescriptionN30V,8A,RD<20M@10V,VTH1.0V~2.0V,
Price for G08N03D2

Specification of G08N03D2

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
681 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
17W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-DFN (2x2)
Package / Case
6-WDFN Exposed Pad

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