G10N06

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Overview of G10N06

Part NumberG10N06
ManufacturerGoford Semiconductor
DescriptionN60V,10A,RD<16M@10V,VTH1.2V~2.2V
Price for G10N06

Specification of G10N06

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2180 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.6W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.154", 3.90mm Width)

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