G11S

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Overview of G11S

Part NumberG11S
ManufacturerGoford Semiconductor
DescriptionP-20V,RD(MAX)<[email protected],RD(MAX
DatasheetsDownload G11S Datasheet PDFPDF Icon
Price for G11S

Specification of G11S

Status
Active
Series
G
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
18.4mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
2455 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.3W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.154", 3.90mm Width)

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