G12P10K

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Overview of G12P10K

Part NumberG12P10K
ManufacturerGoford Semiconductor
DescriptionP100V,RD(MAX)<200M@-10V,RD(MAX)<
Price for G12P10K

Specification of G12P10K

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
12A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1720 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
57W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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