G18P03S

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Overview of G18P03S

Part NumberG18P03S
ManufacturerGoford Semiconductor
DescriptionP-30V,-15A,RD(MAX)<10M@-10V,VTH-
DatasheetsDownload G18P03S Datasheet PDFPDF Icon
Price for G18P03S

Specification of G18P03S

Status
Active
Series
G
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3570 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.154", 3.90mm Width)

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