G1K2C10S2

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Overview of G1K2C10S2

Part NumberG1K2C10S2
ManufacturerGoford Semiconductor
DescriptionNP100V, 3A,RD<130M@10V,RD<200M@-
DatasheetsDownload G1K2C10S2 Datasheet PDFPDF Icon
Price for G1K2C10S2

Specification of G1K2C10S2

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
-
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
3A (Tc), 3.5A (Tc)
Rds On (Max) @ Id, Vgs
130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
668pF @ 50V, 1732pF @ 50V
Power - Max
2W (Tc), 3.1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP

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