G200P04D3

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Overview of G200P04D3

Part NumberG200P04D3
ManufacturerGoford Semiconductor
DescriptionP-40V,-20A,RD(MAX)<75M@-10V,VTH-
Price for G200P04D3

Specification of G200P04D3

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2662 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN (3.15x3.05)
Package / Case
8-PowerVDFN

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