G20N06D52

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Overview of G20N06D52

Part NumberG20N06D52
ManufacturerGoford Semiconductor
DescriptionN60V,RD(MAX)<30M@10V,RD(MAX)<40M
DatasheetsDownload G20N06D52 Datasheet PDFPDF Icon
Price for G20N06D52

Specification of G20N06D52

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
Supplier
Goford Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
20A (Ta)
Rds On (Max) @ Id, Vgs
30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1220pF @ 30V
Power - Max
45W (Ta)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (4.9x5.75)

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