G250N03IE

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Overview of G250N03IE

Part NumberG250N03IE
ManufacturerGoford Semiconductor
DescriptionN30V,ESD 5.3A,RD<25M@10V,VTH0.5V
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Price for G250N03IE

Specification of G250N03IE

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
1.3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.1 nC @ 4.5 V
Vgs (Max)
10V
Input Capacitance (Ciss) (Max) @ Vds
573 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.4W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3

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