G28N03D3

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Overview of G28N03D3

Part NumberG28N03D3
ManufacturerGoford Semiconductor
DescriptionN30V,RD(MAX)<12M@10V,RD(MAX)<18M
DatasheetsDownload G28N03D3 Datasheet PDFPDF Icon
Price for G28N03D3

Specification of G28N03D3

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
891 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
20.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN (3.15x3.05)
Package / Case
8-PowerVDFN

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