G2K2P10S2E

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Overview of G2K2P10S2E

Part NumberG2K2P10S2E
ManufacturerGoford Semiconductor
DescriptionP-100V,ESD,-3.5A,RD(MAX)<200M@-1
DatasheetsDownload G2K2P10S2E Datasheet PDFPDF Icon
Price for G2K2P10S2E

Specification of G2K2P10S2E

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
3.5A (Tc)
Rds On (Max) @ Id, Vgs
200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1623pF @ 50V
Power - Max
3.1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP

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