G350P02LLE

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Overview of G350P02LLE

Part NumberG350P02LLE
ManufacturerGoford Semiconductor
DescriptionP-20V,-8.2A,RD(MAX)<[email protected],V
DatasheetsDownload G350P02LLE Datasheet PDFPDF Icon
Price for G350P02LLE

Specification of G350P02LLE

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17.2 nC @ 10 V
Vgs (Max)
10V
Input Capacitance (Ciss) (Max) @ Vds
1126 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.4W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-6L
Package / Case
SOT-23-6

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