G3R75MT12K

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Overview of G3R75MT12K

Part NumberG3R75MT12K
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 41A TO247-4
DatasheetsDownload G3R75MT12K Datasheet PDFPDF Icon
Price for G3R75MT12K

Specification of G3R75MT12K

Status
Active
Series
G3R™
Package
Tube
Supplier
GeneSiC Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.69V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 15 V
Vgs (Max)
15V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
207W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4

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