G3S12015H

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Overview of G3S12015H

Part NumberG3S12015H
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARB 1.2KV 21A TO220F
DatasheetsDownload G3S12015H Datasheet PDFPDF Icon
Price for G3S12015H

Specification of G3S12015H

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
21A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 15 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
1700pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F
Operating Temperature - Junction
-55C ~ 175C

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