G400P06T

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Overview of G400P06T

Part NumberG400P06T
ManufacturerGoford Semiconductor
DescriptionP-60V,-32A,RD(MAX)<40M@-10V,VTH-
DatasheetsDownload G400P06T Datasheet PDFPDF Icon
Price for G400P06T

Specification of G400P06T

Status
Active
Series
G
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2598 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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