G4S06515QT

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Overview of G4S06515QT

Part NumberG4S06515QT
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARBIDE 650V 53A 4DFN
DatasheetsDownload G4S06515QT Datasheet PDFPDF Icon
Price for G4S06515QT

Specification of G4S06515QT

Status
Active
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
Global Power Technology-GPT
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
53A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 15 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
645pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
4-PowerTSFN
Supplier Device Package
4-DFN (8x8)
Operating Temperature - Junction
-55C ~ 175C

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