G52YT

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Overview of G52YT

Part NumberG52YT
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARBIDE 650V 5.8A SMA
DatasheetsDownload G52YT Datasheet PDFPDF Icon
Price for G52YT

Specification of G52YT

Status
Active
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
Global Power Technology-GPT
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
5.8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 2 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
116.75pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Supplier Device Package
SMA
Operating Temperature - Junction
-55C ~ 175C

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