G58N06F

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Overview of G58N06F

Part NumberG58N06F
ManufacturerGoford Semiconductor
DescriptionN60V, 35A,RD<13M@10V,VTH1.0V~2.4
DatasheetsDownload G58N06F Datasheet PDFPDF Icon
Price for G58N06F

Specification of G58N06F

Status
Active
Series
G
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
30006 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
44W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack

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