G5S6504Z

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Overview of G5S6504Z

Part NumberG5S6504Z
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARB 650V 15.45A 8DFN
DatasheetsDownload G5S6504Z Datasheet PDFPDF Icon
Price for G5S6504Z

Specification of G5S6504Z

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
15.45A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
181pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (4.9x5.75)
Operating Temperature - Junction
-55C ~ 175C

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