G66

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Overview of G66

Part NumberG66
ManufacturerGoford Semiconductor
DescriptionP-16V,-5.8A,RD(MAX)<[email protected],VT
DatasheetsDownload G66 Datasheet PDFPDF Icon
Price for G66

Specification of G66

Status
Active
Series
G
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25C
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
45mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-DFN (2x2)
Package / Case
6-WDFN Exposed Pad

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