G900P15D5

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Overview of G900P15D5

Part NumberG900P15D5
ManufacturerGoford Semiconductor
DescriptionP-150V,-60A,RD(MAX)<80M@-10V,VTH
Price for G900P15D5

Specification of G900P15D5

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4050 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN (4.9x5.75)
Package / Case
8-PowerTDFN

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