GA05JT12-263

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Overview of GA05JT12-263

Part NumberGA05JT12-263
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1200V 15A D2PAK
DatasheetsDownload GA05JT12-263 Datasheet PDFPDF Icon
Price for GA05JT12-263

Specification of GA05JT12-263

Status
Obsolete
Package
Tube
Supplier
GeneSiC Semiconductor
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
106W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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