GA10JT12-247

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Overview of GA10JT12-247

Part NumberGA10JT12-247
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1200V 10A TO247AB
DatasheetsDownload GA10JT12-247 Datasheet PDFPDF Icon
Price for GA10JT12-247

Specification of GA10JT12-247

Status
Obsolete
Package
Tube
Supplier
GeneSiC Semiconductor
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
140mOhm @ 10A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AB
Package / Case
TO-247-3

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