GA50JT06-258

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Overview of GA50JT06-258

Part NumberGA50JT06-258
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 600V 100A TO258
DatasheetsDownload GA50JT06-258 Datasheet PDFPDF Icon
Price for GA50JT06-258

Specification of GA50JT06-258

Status
Active
Package
Bulk
Supplier
GeneSiC Semiconductor
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
25mOhm @ 50A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
769W (Tc)
Operating Temperature
-55C ~ 225C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-258
Package / Case
TO-258-3, TO-258AA

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